| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTP20N60B3 | TRANSISTOR IGBT TO-220 | Fairchild-Semiconductor | - | - | - | - | 138 K |
| HGTP20N60C3R | TRANSISTOR IGBT TO-262 | Fairchild-Semiconductor | - | - | - | - | 107 K |
| IXDP20N60B | 600V high voltage IGBT with optional diode | distributor | - | 3 | -55°C | 150°C | 74 K |
| IXDP20N60BD1 | 600V high voltage IGBT with optional diode | distributor | - | 3 | -55°C | 150°C | 74 K |
| IXGP20N100 | 1000V IGBT | distributor | - | 3 | -55°C | 150°C | 52 K |
| IXGP20N120 | 1200V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 71 K |
| IXGP20N60B | 600V HiPerFAST IGBT | distributor | - | 3 | -55°C | 150°C | 112 K |
| MGP20N14CL | 20 amperes voltage clamped | Motorola | - | 3 | -55°C | 175°C | 77 K |
| MTP20N06V | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 209 K |
| MTP20N20E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 203 K |
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