| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| D2587P245 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 192.45 THz. Center wavelength 1557.77 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| OP245A | GaAs plastic infrared emitting diode | distributor | - | 2 | -40°C | 100°C | 353 K |
| OP245B | GaAs plastic infrared emitting diode | distributor | - | 2 | -40°C | 100°C | 353 K |
| OP245C | GaAs plastic infrared emitting diode | distributor | - | 2 | -40°C | 100°C | 353 K |
| OP245D | GaAs plastic infrared emitting diode | distributor | - | 2 | -40°C | 100°C | 353 K |
| OP245PS | Plastic point source infrared emitting diode | distributor | - | 2 | -40°C | 100°C | 100 K |
| VP2450N3 | 500V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 95 K |
| VP2450N8 | 500V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 95 K |
| VP2450ND | 500V P-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 95 K |
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