| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GP250MHB06S | Half bridge IGBT module | distributor | - | 11 | - | - | 127 K |
| HIP2500IB | Half brifge 500 Vdc driver | Harris-Semiconductor | SOIC | 16 | -40°C | 85°C | 100 K |
| HIP2500IP1 | Half brifge 500 Vdc driver | Harris-Semiconductor | DIP | 16 | -40°C | 85°C | 100 K |
| IRFP250 | 200V standart power MOSFET | distributor | - | 3 | -55°C | 150°C | 47 K |
| IRFP250N | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.075 Ohm, ID = 30A | International-Rectifier | - | 3 | -55°C | 175°C | 122 K |
| MP2505 | Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 50V, max RMS bridge input voltage 35V, max DC blocking voltage 50V. Max average forward output current 25.0A at Tc=55degC. | distributor | - | 4 | -55°C | 175°C | 28 K |
| MP2505 | Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 50V, max RMS bridge input voltage 35V, max DC blocking voltage 50V. Max average forward output current 25.0A at Tc=55degC. | distributor | - | 4 | -55°C | 175°C | 28 K |
| SP250F | 25000 V rectifier stack 0.5 A forward current, 150 ns recovery time | distributor | - | 2 | -55°C | 150°C | 71 K |
| SP250S | 25000 V rectifier stack 0.5 A forward current, 3000 ns recovery time | distributor | - | 2 | -55°C | 150°C | 71 K |
| SP250UF | 25000 V rectifier stack 0.5 A forward current, 70 ns recovery time | distributor | - | 2 | -55°C | 150°C | 71 K |
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