| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FGP30N6S2 | 600V, SMPS II Series N-Channel IGBT | Fairchild-Semiconductor | - | - | - | - | 177 K |
| FGP30N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode | Fairchild-Semiconductor | - | - | - | - | 281 K |
| FGP30N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode | Fairchild-Semiconductor | - | - | - | - | 281 K |
| FQP30N06 | 60V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 660 K |
| FQP30N06L | 60V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 623 K |
| MTP30N06VL | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 207 K |
| PHP30NQ15T | 150 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 288 K |
| RFP30N06LE | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 392 K |
| RFP30N06LE | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 80 K |
| STP30NE06L | N-CHANNEL 60V - 0.035 OHM - 30A - TO-220/TO-220FP STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 105 K |
| STP30NE06LFP | N-CHANNEL 60V - 0.035 OHM - 30A - TO-220/TO-220FP STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 105 K |
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