| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTP3N50E | TMOS E-FET high energy power FET | Motorola | - | 4 | -65°C | 150°C | 251 K |
| PHP3N50 | 500 V, power MOS transistor | Philips-Semiconductors | TO | 3 | -55°C | 150°C | 53 K |
| PHP3N50 | 500 V, power MOS transistor | Philips-Semiconductors | TO | 3 | -55°C | 150°C | 53 K |
| PHP3N50 | PowerMOS transistor. | Philips-Semiconductors | TO220AB | 3 | -55°C | 150°C | 64 K |
| PHP3N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 78 K |
| PHP3N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO220AB | 3 | -55°C | 150°C | 78 K |
| PHP3N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT78 | 3 | -55°C | 150°C | 78 K |
| RFP3N50 | 3.0A, 450V and 500V, 3.000 ohm, N-Channel Power MOSFET FN1384.2 | Intersil-Corporation | - | - | - | - | 81 K |
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