| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AD20MSP410 | GSM Baseband Processing Chipset | Analog-Devices | - | - | - | - | 62 K |
| BUP410 | IGBT | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 96 K |
| BUP410D | IGBT with antiparallel diode | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 81 K |
| FP410L(4x80)FM | Double differential magneto resistor | Infineon-formely-Siemens | - | 6 | -40°C | 175°C | 201 K |
| KS57P4104 | Single-chip CMOS microcontroller. OTP version | Samsung-Electronic | SDIP | 42 | -40°C | 85°C | 233 K |
| KS57P4104 | Single-chip CMOS microcontroller. OTP version | Samsung-Electronic | QFP | 44 | -40°C | 85°C | 233 K |
| KS86P4104 | 8-bit single-chip CMOS microcontroller. OTP version. | Samsung-Electronic | SDIP | 24 | -40°C | 85°C | 250 K |
| KS86P4104 | 8-bit single-chip CMOS microcontroller. OTP version. | Samsung-Electronic | SOP | 24 | -40°C | 85°C | 250 K |
| NDP410A | N-Channel Enhancement Mode Field Effect Transistor [Obsolete] | Fairchild-Semiconductor | - | 3 | - | - | 74 K |
| ZVP4105A | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 49 K |
| ZVP4105A | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 49 K |
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