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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FQP4N60600V N-Channel MOSFETFairchild-Semiconductor----530 K
MGP4N60EInsulated Gate Bipolar Transistor N-ChannelON-Semiconductor-3--120 K
MGP4N60EDInsulated Gate Bipolar Transistor with Anti-Parallel Diode N-ChannelON-Semiconductor-3--146 K
PHP4N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C80 K
PHP4N60EPowerMOS transistor. Avalanche energy rated.Philips-SemiconductorsSOT783-55°C150°C80 K
SSP4N60B600V, 4A N-channel MOSFETFairchild-Semiconductor-3-55°C150°C890 K

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