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p50n06

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MTP50N06ELTMOS E-FET power field effect transistorMotorola-4-55°C150°C232 K
MTP50N06VTMOS V power field effect transistorMotorola-4-55°C175°C179 K
MTP50N06VLTMOS V power field effect transistorMotorola-4-55°C175°C195 K
RFP50N0650A, 60V, 0.022 Ohm, N-Channel Power MOSFETsIntersil-Corporation----74 K
RFP50N0650A, 60V, 0.022 Ohm, N-Channel Power MOSFETsIntersil-Corporation----74 K
RFP50N06LE50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETsIntersil-Corporation----412 K
STP50N06N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----201 K
STP50N06FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----201 K
STP50N06LN-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----199 K
STP50N06LFIN-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----199 K
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