| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTP7N60A4 | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 168 K |
| HGTP7N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 134 K |
| HGTP7N60B3 | 14A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 92 K |
| HGTP7N60B3D | 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 94 K |
| HGTP7N60C3D | 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | Intersil-Corporation | - | - | - | - | 176 K |
| IXGP7N60B | 600V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 70 K |
| IXGP7N60C | 600V HiPerFET power IGBT | distributor | - | 3 | -55°C | 150°C | 50 K |
| IXGP7N60CD1 | 600V HiPerFAST IGBT with diode | distributor | - | 3 | -55°C | 150°C | 52 K |
| MGP7N60E | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 118 K |
| MGP7N60ED | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 144 K |
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