Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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CXP86212 | CMOS 8-bit Single Chip Microcomputer | Sony-Semiconductor | - | - | - | - | 354 K |
CXP86213 | CMOS 8-bit Single Chip Microcomputer | Sony-Semiconductor | - | - | - | - | 240 K |
CXP86216 | CMOS 8-bit Single Chip Microcomputer | Sony-Semiconductor | - | - | - | - | 354 K |
CXP86217 | CMOS 8-bit Single Chip Microcomputer | Sony-Semiconductor | - | - | - | - | 240 K |
D2525P862 | Wavelength-selected isolated DFB laser module with PMF. ITU frequency 186.2. Wavelength 1610.06. Tolerance +-0.4nm. | distributor | Metal/ceramic butter | 14 | -40°C | 70°C | 261 K |
D2547P862 | Wavelength-selected, high-power without locker(L-band) isolated DFB laser module. ITU-T frequency 186.2 THz. Center wavelength 1610.06 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
D2587P862 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 186.2 THz. Center wavelength 1610.06 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
D2587P8625 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 186.25 THz. Center wavelength 1609.62 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
S3P8629 | 8-bit single-chip CMOS microcontroller. OTP version | Samsung-Electronic | SDIP | 42 | -40°C | 85°C | 182 K |
S3P8629 | 8-bit single-chip CMOS microcontroller. OTP version | Samsung-Electronic | QFP | 44 | -40°C | 85°C | 182 K |
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