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p862

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
CXP86212CMOS 8-bit Single Chip MicrocomputerSony-Semiconductor----354 K
CXP86213CMOS 8-bit Single Chip MicrocomputerSony-Semiconductor----240 K
CXP86216CMOS 8-bit Single Chip MicrocomputerSony-Semiconductor----354 K
CXP86217CMOS 8-bit Single Chip MicrocomputerSony-Semiconductor----240 K
D2525P862Wavelength-selected isolated DFB laser module with PMF. ITU frequency 186.2. Wavelength 1610.06. Tolerance +-0.4nm.distributorMetal/ceramic butter14-40°C70°C261 K
D2547P862Wavelength-selected, high-power without locker(L-band) isolated DFB laser module. ITU-T frequency 186.2 THz. Center wavelength 1610.06 nm. High optical power 20 mW, CWdistributorMetal/ceramic butter14-25°C70°C122 K
D2587P862Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 186.2 THz. Center wavelength 1610.06 nm. High optical power 20 mW, CWdistributorMetal/ceramic butter14-25°C70°C122 K
D2587P8625Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 186.25 THz. Center wavelength 1609.62 nm. High optical power 20 mW, CWdistributorMetal/ceramic butter14-25°C70°C122 K
S3P86298-bit single-chip CMOS microcontroller. OTP versionSamsung-ElectronicSDIP42-40°C85°C182 K
S3P86298-bit single-chip CMOS microcontroller. OTP versionSamsung-ElectronicQFP44-40°C85°C182 K
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