Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AH11PP900-PCB | 50- 1500MHz, 11V; high dynamic range amplifier | Watkins-Johnson-WJ-Company | SOIC | 8 | -40°C | 85°C | 127 K |
D2525P900 | Wavelength-selected isolated DFB laser module with PMF. ITU frequency 190.0. Wavelength 1577.85. Tolerance +-0.4nm. | distributor | Metal/ceramic butter | 14 | -40°C | 70°C | 261 K |
D2547P900 | Wavelength-selected, high-power without locker(L-band) isolated DFB laser module. ITU-T frequency 190.0 THz. Center wavelength 1577.86 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
D2587P900 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 190.0 THz. Center wavelength 1577.86 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
D2587P9005 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 190.05 THz. Center wavelength 1577.44 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
OP900SL | PN junction silicon photodiode | distributor | - | - | -65°C | 125°C | 247 K |
PP900D060 | 600V, 900A Half Bridge POW-R-PAK power IGBT assembly | distributor | - | - | - | - | 365 K |
PP900D120 | 600V, 900A Half Bridge POW-R-PAK power IGBT assembly | distributor | - | - | - | - | 366 K |
PP900D120 | 600V, 900A Half Bridge POW-R-PAK power IGBT assembly | distributor | - | - | - | - | 366 K |
S3P9004 | 8-bit single-chip CMOS microcontroller. OTP version. | Samsung-Electronic | - | 40 | -40°C | 85°C | 162 K |
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