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p900

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AH11PP900-PCB50- 1500MHz, 11V; high dynamic range amplifierWatkins-Johnson-WJ-CompanySOIC8-40°C85°C127 K
D2525P900Wavelength-selected isolated DFB laser module with PMF. ITU frequency 190.0. Wavelength 1577.85. Tolerance +-0.4nm.distributorMetal/ceramic butter14-40°C70°C261 K
D2547P900Wavelength-selected, high-power without locker(L-band) isolated DFB laser module. ITU-T frequency 190.0 THz. Center wavelength 1577.86 nm. High optical power 20 mW, CWdistributorMetal/ceramic butter14-25°C70°C122 K
D2587P900Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 190.0 THz. Center wavelength 1577.86 nm. High optical power 20 mW, CWdistributorMetal/ceramic butter14-25°C70°C122 K
D2587P9005Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 190.05 THz. Center wavelength 1577.44 nm. High optical power 20 mW, CWdistributorMetal/ceramic butter14-25°C70°C122 K
OP900SL PN junction silicon photodiodedistributor---65°C125°C247 K
PP900D060600V, 900A Half Bridge POW-R-PAK power IGBT assemblydistributor----365 K
PP900D120600V, 900A Half Bridge POW-R-PAK power IGBT assemblydistributor----366 K
PP900D120600V, 900A Half Bridge POW-R-PAK power IGBT assemblydistributor----366 K
S3P90048-bit single-chip CMOS microcontroller. OTP version.Samsung-Electronic-40-40°C85°C162 K
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