Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRFPC30 | HEXFET power MOSFET. VDSS = 600 V, RDS(on) = 2.2 Ohm, ID = 4.3 A | International-Rectifier | - | 3 | -55°C | 150°C | 167 K |
IRG4PC30 | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A | International-Rectifier | - | 3 | -55°C | 150°C | 145 K |
IRG4PC30FD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A | International-Rectifier | - | 3 | -55°C | 150°C | 210 K |
IRG4PC30K | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A | International-Rectifier | - | 3 | -55°C | 150°C | 121 K |
IRG4PC30KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A | International-Rectifier | - | 3 | -55°C | 150°C | 178 K |
IRG4PC30KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A | International-Rectifier | - | 3 | -55°C | 150°C | 178 K |
IRG4PC30S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A | International-Rectifier | - | 3 | -55°C | 150°C | 120 K |
IRG4PC30U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A | International-Rectifier | - | 3 | -55°C | 150°C | 145 K |
IRG4PC30UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A | International-Rectifier | - | 3 | -55°C | 150°C | 211 K |
IRG4PC30W | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12A | International-Rectifier | - | 3 | -55°C | 150°C | 123 K |
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