Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MWS11-PH22-CS | CDMA InGaP HBT Power Amplifier | Microsemi-Corporation | 16_PIN_MLP | - | - | - | 111 K |
PH2222 | NPN switching transistor | Philips-Semiconductors | SOT54 | - | - | - | 45 K |
PH2222A | NPN switching transistor. | Philips-Semiconductors | SOT54 | 3 | -65°C | 150°C | 49 K |
PH2222A | NPN switching transistor. | Philips-Semiconductors | - | 3 | -65°C | 150°C | 49 K |
PH2222A | NPN switching transistor | Philips-Semiconductors | SOT54 | - | - | - | 45 K |
PH2222A | 75 V, 600 mA, NPN switching transistor | Philips-Semiconductors | SOT | 3 | -65°C | 150°C | 51 K |
PH2226-110M | 2250-2550 MHz,110 W, 100 ms pulse, radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 99 K |
PH2226-50M | 2200-2600 MHz,50 W, 100 ms pulse, radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 92 K |
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