| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHB60N06LT | TrenchMOS transistor Logic level FET | Philips-Semiconductors | SOT404 | - | - | - | 71 K |
| PHB60N06T | TrenchMOS transistor Standard level FET | Philips-Semiconductors | SOT404 | - | - | - | 68 K |
| PHB65N06LT | Trench transistor Logic level FET | Philips-Semiconductors | SOT404 | - | - | - | 69 K |
| PHB65N06T | TrenchMOS transistor Standard level FET | Philips-Semiconductors | SOT404 | - | - | - | 68 K |
| PHB66NQ03LT | 25 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 301 K |
| PHB69N03LT | N-channel TrenchMOS(TM) transistor Logic level FET | Philips-Semiconductors | SOT404 | - | - | - | 108 K |
| PHB69N03LT | 25 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 111 K |
| PHB69N03T | TrenchMOS transistor Standard level FET | Philips-Semiconductors | SOT404 | - | - | - | 66 K |
| PHB6N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 77 K |
| PHB6N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 74 K |
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