| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DR200G | 50 V, 2 A, glass passivated junction silicon rectifier | distributor | D2 | 2 | -65°C | 175°C | 39 K |
| ER200 | Superfast recovery rectifier. Max recurrent peak reverse voltage 50V. Max average forward current 2.0 A. | distributor | - | 2 | -55°C | 150°C | 67 K |
| PR2002G | 100V, 2.0A fast recovery glass passivated rectifier | distributor | - | 2 | -55°C | 150°C | 34 K |
| PR2003G | 200V, 2.0A fast recovery glass passivated rectifier | distributor | - | 2 | -55°C | 150°C | 34 K |
| PR2004G | 400V, 2.0A fast recovery glass passivated rectifier | distributor | - | 2 | -55°C | 150°C | 34 K |
| PR2005G | 600V, 2.0A fast recovery glass passivated rectifier | distributor | - | 2 | -55°C | 150°C | 34 K |
| PR2006G | 800V, 2.0A fast recovery glass passivated rectifier | distributor | - | 2 | -55°C | 150°C | 34 K |
| PR2007G | 1000V, 2.0A fast recovery glass passivated rectifier | distributor | - | 2 | -55°C | 150°C | 34 K |
| R2000 | 2000 V, 200 mA, High voltage silicon rectifier | distributor | DO | 2 | -65°C | 175°C | 40 K |
| R2000F | 2000 V, 200 mA, High voltage silicon rectifier | distributor | DO | 2 | -65°C | 175°C | 39 K |
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