Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FGR4000HX-90DS | Reverse-condition GTO thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 71 K |
R4000 | 0.2 mA high voltage silicon rectifier | distributor | - | 2 | -65°C | 175°C | 324 K |
R4000 | 4000 V, 0.2 A high voltage diode | distributor | - | 2 | - | - | 23 K |
R4000 | 4000 V, 0.2 A high voltage diode | distributor | - | 2 | - | - | 23 K |
R4000 | High voltage silicon rectifier. Max recurrent peak reverse voltage 4000V, max RMS voltage 2800V, max DC blocking voltage 4000V. Max average forward rectified current 200mA at Ta=50degC. | distributor | - | 2 | -65°C | 175°C | 19 K |
R4000F | 0.2 mA high voltage fast recovery rectifier | distributor | - | 2 | -65°C | 175°C | 401 K |
R4000F | 4000 V, 0.2 A high voltage fast recovery diode | distributor | - | 2 | - | - | 29 K |
R4000F | 4000 V, 0.2 A high voltage fast recovery diode | distributor | - | 2 | - | - | 29 K |
R4000F | High voltage fast recovery rectifier. Max recurrent peak reverse voltage 4000V, max RMS voltage 2800V, max DC blocking voltage 4000V. Max average forward rectified current 200mA at Ta=50degC. | distributor | - | 2 | -65°C | 175°C | 20 K |
ZNBR4000Q16 | FET bias controller | Zetex-Semiconductor | QSOP | 16 | -40°C | 70°C | 183 K |
ZNBR4000Q16 | FET bias controller | Zetex-Semiconductor | QSOP | 16 | -40°C | 70°C | 183 K |
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