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r4000

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FGR4000HX-90DSReverse-condition GTO thyristor for high power inverter use press pack typeMitsubishi-Electric-Corporation-Semiconductor-Group-2-40°C125°C71 K
R40000.2 mA high voltage silicon rectifierdistributor-2-65°C175°C324 K
R40004000 V, 0.2 A high voltage diodedistributor-2--23 K
R40004000 V, 0.2 A high voltage diodedistributor-2--23 K
R4000High voltage silicon rectifier. Max recurrent peak reverse voltage 4000V, max RMS voltage 2800V, max DC blocking voltage 4000V. Max average forward rectified current 200mA at Ta=50degC.distributor-2-65°C175°C19 K
R4000F0.2 mA high voltage fast recovery rectifierdistributor-2-65°C175°C401 K
R4000F4000 V, 0.2 A high voltage fast recovery diodedistributor-2--29 K
R4000F4000 V, 0.2 A high voltage fast recovery diodedistributor-2--29 K
R4000FHigh voltage fast recovery rectifier. Max recurrent peak reverse voltage 4000V, max RMS voltage 2800V, max DC blocking voltage 4000V. Max average forward rectified current 200mA at Ta=50degC.distributor-2-65°C175°C20 K
ZNBR4000Q16FET bias controllerZetex-SemiconductorQSOP16-40°C70°C183 K
ZNBR4000Q16FET bias controllerZetex-SemiconductorQSOP16-40°C70°C183 K
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