Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRF1104 | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.009 Ohm, ID = 100A. | International-Rectifier | - | 3 | -55°C | 175°C | 101 K |
MRF1150MA | 150 W, microwave power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 150 K |
MRF1150MA | 150 W, microwave power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 150 K |
MRF1150MA | Microwave pulse power transistor | Motorola | - | 4 | - | - | 128 K |
MRF1150MB | 150 W, microwave power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 4 | - | - | 146 K |
PQ05RF11 | Low power-loss voltage regulator | Sharp | - | 4 | -20°C | 80°C | 65 K |
PQ09RF11 | Low power-loss voltage regulator | Sharp | - | 4 | -20°C | 80°C | 65 K |
PQ12RF11 | Low power-loss voltage regulator | Sharp | - | 4 | -20°C | 80°C | 65 K |
RF110 | Power amplifier | distributor | TSSOP | 20 | -10°C | 70°C | 78 K |
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