| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF3315 | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.07 Ohm, ID = 27A | International-Rectifier | - | 3 | -55°C | 175°C | 124 K |
| RF3320 | Cable reverse path programmable gain amplifier | RF-Micro-Devices-RFMD | SSOP | 16 | -40°C | 85°C | 318 K |
| RF3320PCBA | Cable reverse path programmable gain amplifier | RF-Micro-Devices-RFMD | SSOP | 16 | -40°C | 85°C | 318 K |
| RF3321 | Reverse path high output power programmable gain amplifier | RF-Micro-Devices-RFMD | SSOP | 16 | -40°C | 85°C | 195 K |
| RF3321PCBA | Reverse path high output power programmable gain amplifier | RF-Micro-Devices-RFMD | SSOP | 16 | -40°C | 85°C | 195 K |
| RF3322 | Cable reverse path programmable gain amplifier | RF-Micro-Devices-RFMD | QSOP | 20 | -40°C | 85°C | 169 K |
| RF3322PCBA | Cable reverse path programmable gain amplifier | RF-Micro-Devices-RFMD | QSOP | 20 | -40°C | 85°C | 169 K |
| RF3330 | If gain controlled amplifier | RF-Micro-Devices-RFMD | SOT | 8 | -40°C | 85°C | 143 K |
| RF3330PCBA | If gain controlled amplifier | RF-Micro-Devices-RFMD | SOT | 8 | -40°C | 85°C | 143 K |
| RN5RF33BC | Low ripple voltage regulator with external transistor. Output voltage 3.3V. Chip enable active type H. Antistatic bag | distributor | - | 5 | -40°C | 85°C | 134 K |
| RN5RF33BC | Low ripple voltage regulator with external transistor. Output voltage 3.3V. Chip enable active type H. Antistatic bag | distributor | - | 5 | -40°C | 85°C | 134 K |
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