Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRF450 | Power dissipation 125 W Transistor polarity N Channel Centres fixing 30 mm Current Id cont. 13 A Current Idm pulse 52 A Pitch lead 11 mm Voltage Vds max 500 V Resistance Rds on 0.4 R | Fairchild-Semiconductor | - | - | - | - | 56 K |
IRF450 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 0.400 Ohm, ID = 12A | International-Rectifier | - | 3 | -55°C | 150°C | 144 K |
MCRF450/WFB | 13.56 MHz read/write passive RFID device | Microchip-Technology-Inc- | Wafer | - | -20°C | 70°C | 1 M |
MCRF451/W | 13.56 MHz read/write passive RFID device | Microchip-Technology-Inc- | Wafer | - | -20°C | 70°C | 1 M |
MCRF451X/SN | 13.56 MHz read/write passive RFID device | Microchip-Technology-Inc- | SOIC | 8 | -20°C | 70°C | 1 M |
MCRF452/S | 13.56 MHz read/write passive RFID device | Microchip-Technology-Inc- | Wafer | - | -20°C | 70°C | 1 M |
MCRF455/S | 13.56 MHz read/write passive RFID device | Microchip-Technology-Inc- | Wafer | - | -20°C | 70°C | 1 M |
MCRF455/W | 13.56 MHz read/write passive RFID device | Microchip-Technology-Inc- | Wafer | - | -20°C | 70°C | 1 M |
MCRF455/WFB | 13.56 MHz read/write passive RFID device | Microchip-Technology-Inc- | Wafer | - | -20°C | 70°C | 1 M |
MCRF455X/SN | 13.56 MHz read/write passive RFID device | Microchip-Technology-Inc- | SOIC | 8 | -20°C | 70°C | 1 M |
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