Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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ARF462A | 65V, 150W, RF power MOSFET | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 103 K |
ARF462B | 65V, 150W, RF power MOSFET | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 103 K |
ARF462S45 | 4500 V, 435 A, 10 kA fast recovery diode | distributor | - | 2 | -30°C | 125°C | 105 K |
ARF463A | 150V, 100W, RF power MOSFET | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 104 K |
ARF463S45 | 4500 V, 730 A, 10 kA fast recovery diode | distributor | - | 2 | -30°C | 150°C | 45 K |
ARF464A | 65V, 100W, RF power MOSFET | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 102 K |
ARF464B | 65V, 100W, RF power MOSFET | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 102 K |
IRF460 | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A | International-Rectifier | - | 3 | -55°C | 150°C | 140 K |
IRF460 | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A | International-Rectifier | - | 3 | -55°C | 150°C | 140 K |
IRF460 | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A | International-Rectifier | - | 3 | -55°C | 150°C | 140 K |
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