| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF640 | 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 61 K |
| IRF640 | N-channel TrenchMOS transistor | Philips-Semiconductors | SOT78 | - | - | - | 95 K |
| IRF640 | N-CHANNEL 200V - 0.150 OHM - 18A TO-220/TO-220FP MESH OVERLAY MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 107 K |
| IRF640FP | N-CHANNEL 200V - 0.150 OHM - 18A TO-220/TO-220FP MESH OVERLAY MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 107 K |
| IRF640S | N-channel TrenchMOS transistor | Philips-Semiconductors | SOT404 | - | - | - | 95 K |
| IRF640S | N-CHANNEL 200V - 0.150 OHM -18A TO-263 MESH OVERLAY MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 84 K |
| MRF6404 | NPN silicon RF power transistor | Motorola | - | 3 | - | - | 276 K |
| MRF6404K | NPN silicon RF power transistor | Motorola | - | 3 | - | - | 276 K |
| MRF6408 | NPN silicon RF power transistor | Motorola | - | 3 | - | - | 230 K |
| MRF6409 | NPN silicon RF power transistor | Motorola | - | 6 | - | - | 273 K |
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