| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ARF664S33 | 3300 V, 1000 A, 18 kA fast recovery diode | distributor | - | 2 | -30°C | 125°C | 105 K |
| IRF6601 | Power MOSFET, 20V, 26A | International-Rectifier | ISOMETRIC | 5 | -55°C | 150°C | 130 K |
| IRF6602 | Power MOSFET for Ideal for CPU core DC-DC converters, 20V, 11A | International-Rectifier | DirectFET | 5 | -55°C | 150°C | 131 K |
| IRF6641TR1
| DirectFET TM Power MOSFET | distributor | - | | - | - | 246 K |
| IRF6641TR1PbF | DirectFET TM Power MOSFET | distributor | - | | - | - | 246 K |
| IRF6641TRPbF | DirectFET TM Power MOSFET | distributor | - | | - | - | 246 K |
| IRF6643TR1PBF
| A 150V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 35 amperes optimized with low on resistance for applications such as active ORing | distributor | - | | - | - | 263 K |
| IRF6643TRPBF | A 150V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 35 amperes optimized with low on resistance for applications such as active ORing | distributor | - | | - | - | 263 K |
| IRF6643TRPBF | A 150V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 35 amperes optimized with low on resistance for applications such as active ORing | distributor | - | | - | - | 263 K |
| IRF6645 | A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET SJ package rated at 25 amperes optimized with low on resistance for applications such as active OR’ing | International-Rectifier | - | | - | - | 245 K |
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