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rf83

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRF8304.5A, 500V, 1.500 Ohm, N-Channel Power MOSFETIntersil-Corporation----56 K
IRF830500 V, Power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C58 K
IRF830N-CHANNEL 500V - 1.35 OHM - 4.5A - TO-220 POWERMESH MOSFETSGS-Thomson-Microelectronics----92 K
IRF830500 V, 4.5 A, power field effect transistordistributorTO3-55°C150°C282 K
IRF830AHEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0AInternational-Rectifier-3-55°C150°C108 K
IRF830ASHEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0AInternational-RectifierDDPak3-55°C150°C155 K
IRF830SHEXFET power MOSFET. VDS = 500V, RDS(on) = 1.5 Ohm , ID = 4.5AInternational-Rectifier-3-55°C150°C175 K
MRF8372R1NPN silicon RF low power transistorMotorola-8--101 K
MRF8372R2NPN silicon RF low power transistorMotorola-8--101 K
SRF830Schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 8.0 A.distributor-2-65°C125°C150 K
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