| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FRF9250H | 14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 48 K |
| IRF9230 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -200V, RDS(on) = 0.80 Ohm, ID = -6.5A | International-Rectifier | - | 3 | -55°C | 150°C | 149 K |
| IRF9230 | 200V Vdss P-Channel FET (field effect transistor) | Semelab-Plc- | TO3 | - | - | - | 22 K |
| IRF9240 | HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A | International-Rectifier | - | 3 | -55°C | 150°C | 147 K |
| IRF9240 | HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A | International-Rectifier | - | 3 | -55°C | 150°C | 147 K |
| IRF9240 | HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A | International-Rectifier | - | 3 | -55°C | 150°C | 147 K |
| IRF9240 | HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A | International-Rectifier | - | 3 | -55°C | 150°C | 147 K |
| IRF9240SMD | 200V Vdss P-Channel FET (field effect transistor) | Semelab-Plc- | SMD1 | - | - | - | 25 K |
| MRF927T1 | NPN silicon high-frequency transistor | Motorola | SOT | 3 | - | - | 165 K |
| MRF927T3 | NPN silicon high-frequency transistor | Motorola | SOT | 3 | - | - | 165 K |
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