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rg60

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
KM416RD8AC-RG60256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz).Samsung-ElectronicmicroBGA(normal CSP)620°C70°C3 M
KM416RD8AD-RG60256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz).Samsung-ElectronicmicroBGA(mirrored CS620°C70°C3 M
KM418RD8AC-RG60256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz).Samsung-ElectronicmicroBGA(normal CSP)620°C70°C3 M
KM418RD8AD-RG60256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz).Samsung-ElectronicmicroBGA(mirrored CS620°C70°C3 M
RN5RG60AA-TLVoltage regulator with external power transistor. Output voltage 6.0V. Taping type TLdistributor-5-40°C85°C125 K
RN5RG60AA-TRVoltage regulator with external power transistor. Output voltage 6.0V. Standard taping type TRdistributor-5-40°C85°C125 K
RN5RG60ACVoltage regulator with external power transistor. Output voltage 6.0V. Antistatic bag for samplesdistributor-5-40°C85°C125 K
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