| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| RM200HA-20F | 200A - transistor module for high speed switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 47 K |
| RM200HA-24F | 200A - transistor module for high speed switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 47 K |
| RM20DA-XXF | 20A - transistor module for high speed switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 49 K |
| RM20HA-XXF | 20A - transistor module for high speed switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 150°C | 47 K |
| RM20TA-24 | 40A - transistor module for high voltage medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 70 K |
| RM20TA-2H | 40A - transistor module for high voltage medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 70 K |
| RM20TN-H | Three- phase diode bridge module | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 125°C | 27 K |
| RM20TPM-24 | 40A - transistor module for medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 61 K |
| RM20TPM-H | 40A - transistor module for medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 63 K |
| RM20TPM-M | 40A - transistor module for medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 63 K |
| 1 [2] [3] |
|---|
