Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IDT70T651S008BC | High-speed 2.5V 256 x 36 asynchronous dual-port static RAM, 8ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 344 K |
IDT70T651S008BF | High-speed 2.5V 256 x 36 asynchronous dual-port static RAM, 8ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | 0°C | 70°C | 344 K |
IDT70T659S008BC | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 344 K |
IDT70T659S008BF | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | 0°C | 70°C | 344 K |
LES008YD | 15 Watt, input voltage range:18-36V, output voltage 2.5V,(3A) DC/DC converter | distributor | DIP | 6 | -40°C | 100°C | 181 K |
MAMXES0080 | 1850-1910 MHz, high IP3 mixer | M-A-COM---manufacturer-of-RF | SM | 6 | -40°C | 85°C | 71 K |
R7S00808 | 800V, 800A general purpose single diode | distributor | - | - | - | - | 445 K |
R7S00812 | 800V, 1200A general purpose single diode | distributor | - | - | - | - | 427 K |
R7S00816 | 800V, 1600A general purpose single diode | distributor | - | - | - | - | 435 K |
T7S0087504DN | 800V, 750A phase control single thyristor | distributor | - | - | - | - | 629 K |
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