| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1SS295 | Schottky barrier diode for UHF band mixer applications | Toshiba | - | 3 | -55°C | 125°C | 109 K |
| AMS2950ACN-2.5 | 2.5V 150mA low dropout voltage regulator | distributor | - | 3 | -40°C | 125°C | 144 K |
| AMS2950ACN-3.0 | 3.0V 150mA low dropout voltage regulator | distributor | - | 3 | -40°C | 125°C | 144 K |
| AMS2950ACN-3.3 | 3.3V 150mA low dropout voltage regulator | distributor | - | 3 | -40°C | 125°C | 144 K |
| AMS2950CN-2.5 | 2.5V 150mA low dropout voltage regulator | distributor | - | 3 | -40°C | 125°C | 144 K |
| AMS2950CN-3.0 | 3.0V 150mA low dropout voltage regulator | distributor | - | 3 | -40°C | 125°C | 144 K |
| AMS2950CN-3.3 | 3.3V 150mA low dropout voltage regulator | distributor | - | 3 | -40°C | 125°C | 144 K |
| AMS2951ACP-2.5 | 2.5V 150mA low dropout voltage regulator | distributor | PDIP | 8 | -40°C | 125°C | 144 K |
| AMS2951ACP-3.0 | 3.0V 150mA low dropout voltage regulator | distributor | PDIP | 8 | -40°C | 125°C | 144 K |
| BSS295 | N-channel SIPMOS small-signal transistor | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 78 K |
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