| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 23S560 | Bobbin wound surface mount inductor (EMI shielded type). Nominal inductance (1kHz, 100mV AC) 56uH | distributor | - | - | -40°C | 85°C | 51 K |
| K4S560432B-TC/L1H | 16M x 4bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 130 K |
| K4S560432B-TC/L1L | 16M x 4bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 130 K |
| K4S560432B-TC/L75 | 16M x 4bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 130 K |
| K4S560832C-TC/L1H | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 100MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 113 K |
| K4S560832C-TC/L1L | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 100MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 113 K |
| K4S560832C-TC/L75 | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 113 K |
| K4S560832C-TC/L7C | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 113 K |
| K4S560832D-TC/L75 | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 118 K |
| STUS560 | Working peak reverse voltage: 51 V, 1 mA, 500 W surface mount transient voltage suppressor | distributor | SMA | 2 | -55°C | 150°C | 33 K |
| [1] [2] 3 [4] [5] |
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