Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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GNR34S561K | Varistor. Max allowable voltage: ACrms=350V, DC=460V. Varistor voltage 504-616V. | distributor | - | 2 | -40°C | 85°C | 68 K |
K4S561632B-TC/L1H | 4M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 131 K |
K4S561632B-TC/L1L | 4M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 131 K |
K4S561632B-TC/L75 | 4M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 131 K |
K4S561632E-TC60 | 16M x 16 SDRAM, LVTTL, 166MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 198 K |
K4S561632E-TC70 | 16M x 16 SDRAM, LVTTL, 133MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 198 K |
K4S561632E-TCL60 | 16M x 16 SDRAM, LVTTL, 166MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 198 K |
K4S561632E-TCL70 | 16M x 16 SDRAM, LVTTL, 133MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 198 K |
MDE-25S561K | 560V; max peak current:20000A; metal oxide varistor. Standard S series 25mm disc | distributor | - | 2 | - | - | 87 K |
MDE-34S561K | 560V; max peak current:40000A; Tmax=12; metal oxide varistor. High energy series 34mm single square | distributor | - | 2 | - | - | 88 K |
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