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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K4S641632F-TL1LCMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S641632F-TL1LCMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S641632H-TC6064Mb synchronous DRAM, 3.3V, LVTTL interface, 166MHzSamsung-ElectronicTSOP II540°C70°C144 K
K4S641632H-TC7064Mb synchronous DRAM, 3.3V, LVTTL interface, 143MHzSamsung-ElectronicTSOP II540°C70°C144 K
K4S641632H-TC7064Mb synchronous DRAM, 3.3V, LVTTL interface, 143MHzSamsung-ElectronicTSOP II540°C70°C144 K
K4S641632H-TC7564Mb synchronous DRAM, 3.3V, LVTTL interface, 133MHzSamsung-ElectronicTSOP II540°C70°C144 K
K4S641632H-TL7064Mb synchronous DRAM, 3.3V, LVTTL interface, 143MHzSamsung-ElectronicTSOP II540°C70°C144 K
K4S641632H-TL7564Mb synchronous DRAM, 3.3V, LVTTL interface, 133MHzSamsung-ElectronicTSOP II540°C70°C144 K
NCS6416Low-Voltage, Bus-Controlled Video Matrix SwitchON-Semiconductor---104 K
NCS6416DWGLow-Voltage, Bus-Controlled Video Matrix SwitchON-Semiconductor---104 K
NCS6416DWR2G Low-Voltage, Bus-Controlled Video Matrix SwitchON-Semiconductor---104 K
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