Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
MH16S64DAMD-6 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 714 K |
MH16S64DAMD-7 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 714 K |
MH16S64DAMD-8 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 714 K |
MH4S64DBKG-7 | 2,684,354,456-bit (4194304-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 144 | 0°C | 70°C | 681 K |
MH4S64DBKG-7L | 2,684,354,456-bit (4194304-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 144 | 0°C | 70°C | 681 K |
MH4S64DBKG-8 | 2,684,354,456-bit (4194304-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 144 | 0°C | 70°C | 681 K |
MH4S64DBKG-8L | 2,684,354,456-bit (4194304-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 144 | 0°C | 70°C | 681 K |
MH8S64DALD-6 | 536870912-bit (8388608-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 699 K |
MH8S64DALD-7 | 536870912-bit (8388608-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 699 K |
MH8S64DALD-8 | 536870912-bit (8388608-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 699 K |
1 [2] [3] |
---|