| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGT1S7N60A4DS | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 134 K |
| HGT1S7N60A4S | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 168 K |
| HGT1S7N60A4S | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 168 K |
| HGT1S7N60B3DS | 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 94 K |
| HGT1S7N60B3S | 14A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 92 K |
| HGT1S7N60C3DS | TRANSISTOR.IGBT TO-263 | Fairchild-Semiconductor | - | - | - | - | 197 K |
| HGT1S7N60C3DS | 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | Intersil-Corporation | - | - | - | - | 176 K |
| SSS7N60 | N-channel power MOSFET, 600V, 4A | Samsung-Electronic | - | 3 | -55°C | 150°C | 280 K |
| SSS7N60A | N-channel power MOSFET, 600V, 4A | Samsung-Electronic | - | 3 | -55°C | 150°C | 320 K |
| SSS7N60B | 600V, 7A N-channel MOSFET | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 915 K |
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