| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA1939 | PNP planar silicon transistor. Audio power amplifier DC to DC converter. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 24 K |
| 2SA1953 | Silicon NPN epitaxial type transistor for general purpose amplifier applications, switching and muting swith application | Toshiba | - | 3 | - | - | 159 K |
| 2SA1964 | Transistor for audio amplifier output stages / TV velocity modulation | ROHM | - | 3 | -55°C | 150°C | 38 K |
| 2SA1973 | PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 44 K |
| KSA1943 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 65 K |
| SA1920 | Dual-band RF front-end. | Philips-Semiconductors | LQFP | 48 | -40°C | 85°C | 216 K |
| SA1921 | Satellite and cellular dual-band RF front-end. | Philips-Semiconductors | - | 48 | -40°C | 85°C | 509 K |
| SA1921 | Satellite and cellular dual-band RF front-end. | Philips-Semiconductors | - | 48 | -40°C | 85°C | 509 K |
| SA1921 | Satellite and cellular dual-band RF front-end. | Philips-Semiconductors | LQFP | 48 | -40°C | 85°C | 509 K |
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