| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SB1115A-T1 | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 228 K |
| 2SB1115A-T2 | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 228 K |
| 2SB1132 | PNP silicon medium power transistor | ROHM | - | 3 | - | - | 123 K |
| 2SB1148 | Silicon PNP epitaxial planar type power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 59 K |
| 2SB1148A | Silicon PNP epitaxial planar type power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 59 K |
| 2SB1154 | Silicon PNP epitaxial planar type power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 61 K |
| 2SB1155 | Silicon PNP epitaxial planar type power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 61 K |
| 2SB1156 | Silicon PNP epitaxial planar type power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 61 K |
| 2SB1184 | PNP silicon power transistor | ROHM | - | 3 | - | - | 75 K |
| SB1100 | 1.0 Ampere Schottky Barrier Rectifiers | Fairchild-Semiconductor | - | - | - | - | 36 K |
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