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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2SH20IGBTdistributor----43 K
2SH20IGBTdistributor----43 K
BSH205P-channel enhancement mode MOS transistorPhilips-SemiconductorsSOT23---143 K
BSH206P-channel enhancement mode MOS transistorPhilips-SemiconductorsSOT363---144 K
BSH207P-channel enhancement mode MOS transistorPhilips-SemiconductorsSOT457---155 K
BSH207P-channel enhancement mode MOS transistorPhilips-SemiconductorsSOT457---155 K
HSH2000NIEOLamp for photolithography. Power 1750 watts, current 67 amps(DC), voltage 26 volts(DC). Temperature(at base) 220degC(max).distributor-2--44 K
HSH2001CIEOLamp for photolithography. Power 2000 watts, current 77 amps(DC), voltage 26 volts(DC). Temperature(at base) 220degC(max).distributor-2--42 K
HSH2001NIELOLamp for photolithography. Power 1750 watts, current 67 amps(DC), voltage 26 volts(DC). Temperature(at base) 220degC(max).distributor-2--41 K
HSH2001NIEOLamp for photolithography. Power 1750 watts, current 67 amps(DC), voltage 26 volts(DC). Temperature(at base) 220degC(max).distributor-2--51 K
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