| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BSH201 | P-channel enhancement mode MOS transistor. | Philips-Semiconductors | SOT23 | 3 | -55°C | 150°C | 150 K |
| BSH202 | P-channel enhancement mode MOS transistor. | Philips-Semiconductors | SOT23 | 3 | -55°C | 150°C | 138 K |
| BSH203 | P-channel enhancement mode MOS transistor. | Philips-Semiconductors | SOT23 | 3 | -55°C | 150°C | 149 K |
| BSH205 | P-channel enhancement mode MOS transistor. | Philips-Semiconductors | SOT23 | 3 | -55°C | 150°C | 143 K |
| BSH206 | P-channel enhancement mode MOS transistor. | Philips-Semiconductors | SOT363 | 6 | -55°C | 150°C | 144 K |
| BSH207 | P-channel enhancement mode MOS transistor. | Philips-Semiconductors | SOT457 | 6 | -55°C | 150°C | 155 K |
| HSH2002NIEO | Lamp for photolithography. Power 1750 watts, current 67 amps(DC), voltage 26 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 43 K |
| HSH2011NIEO | Lamp for photolithography. Power 2000 watts, current 80 amps(DC), voltage 25 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 42 K |
| KSH200 | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 52 K |
| [1] 2 |
|---|
