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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
ispLSI1016EA-100LJ44In-system programmable high density PLD, 100 MHz, 10ns, low powerLattice-Semiconductor-CorporationPLCC440°C70°C162 K
ispLSI1016EA-100LT44In-system programmable high density PLD, 100 MHz, 10ns, low powerLattice-Semiconductor-CorporationTQFP440°C70°C162 K
ispLSI1016EA-125LJ44In-system programmable high density PLD, 125 MHz, 7.5ns, low powerLattice-Semiconductor-CorporationPLCC440°C70°C162 K
ispLSI1016EA-200LJ44In-system programmable high density PLD, 200 MHz, 4.5ns, low powerLattice-Semiconductor-CorporationPLCC440°C70°C162 K
ispLSI1016EA-200LT44In-system programmable high density PLD, 200 MHz, 4.5ns, low powerLattice-Semiconductor-CorporationTQFP440°C70°C162 K
ispLSI1032E-125LTIn-system programmable high density PLD, 7.5nsLattice-Semiconductor-CorporationTQFP1000°C70°C164 K
ISPLSI1048EA-100LQ128100 MHz in-system prommable high density PLDLattice-Semiconductor-CorporationPQFP1280°C70°C182 K
ISPLSI1048EA-100LT128100 MHz in-system prommable high density PLDLattice-Semiconductor-CorporationTQFP1280°C70°C182 K
ISPLSI1048EA-125LQ128125 MHz in-system prommable high density PLDLattice-Semiconductor-CorporationPQFP1280°C70°C182 K
SSI10N60B600V N-Channel MOSFETFairchild-Semiconductor----686 K
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