| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SK2218 | N-channel junction silicon FET, high-frequency, low-noise amp application | SANYO-Electric-Co--Ltd- | 2125 | 3 | - | - | 130 K |
| 2SK2219 | N-channel junction silicon FET, capacitor microphone application | SANYO-Electric-Co--Ltd- | 2058A | 3 | - | - | 97 K |
| 3SK222 | Dual-gate MOS FET | NEC-Electronics-Inc- | - | - | - | - | 58 K |
| 3SK222-T1 | Dual-gate MOS FET | NEC-Electronics-Inc- | - | - | - | - | 58 K |
| 3SK222-T2 | Dual-gate MOS FET | NEC-Electronics-Inc- | - | - | - | - | 58 K |
| 3SK223 | UHF band high frequency amplification | NEC-Electronics-Inc- | - | - | - | - | 57 K |
| 3SK223-T1 | UHF band high frequency amplification | NEC-Electronics-Inc- | - | - | - | - | 57 K |
| 3SK223-T2 | UHF band high frequency amplification | NEC-Electronics-Inc- | - | - | - | - | 57 K |
| 3SK224 | Dual-gate MOS FET | NEC-Electronics-Inc- | - | - | - | - | 53 K |
| 3SK224-T2 | Dual-gate MOS FET | NEC-Electronics-Inc- | - | - | - | - | 53 K |
| [1] 2 [3] [4] [5] [6] [7] |
|---|
