| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GLT6200L08SL-55FG | 55ns; Ultra low power 256K x 8 CMOS SRAM | distributor | BGA | 48 | -40°C | 85°C | 121 K |
| GLT6200L16SL-55FG | 55ns; Ultra low power 128K x 16 CMOS SRAM | distributor | BGA | 48 | -40°C | 85°C | 197 K |
| GLT6200L16SL-55TC | 55ns; Ultra low power 128K x 16 CMOS SRAM | distributor | TSOP | 44 | -40°C | 85°C | 197 K |
| KM44C4000CSL-5 | 4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung-Electronic | TSOP II | 24 | 0°C | 70°C | 340 K |
| KM44C4003CSL-5 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 376 K |
| KM44C4100CSL-5 | 4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung-Electronic | TSOP II | 24 | 0°C | 70°C | 340 K |
| KM44C4103CSL-5 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns | Samsung-Electronic | TSOP II | 28 | 0°C | 70°C | 376 K |
| KM44V4000CSL-5 | 4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung-Electronic | TSOP II | 24 | 0°C | 70°C | 340 K |
| KM44V4100CSL-5 | 4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns | Samsung-Electronic | TSOP II | 24 | 0°C | 70°C | 340 K |
| TXD2SL-5V | TX-D relay. High insulation relay (conforming to the supplementary insulastion class of EN standard (EN41003)). Standard (B.B.M.) type. Hing connection reliability surface-mount terminal. Single side stable. Tube packing. Coil rating 5 V DC. | distributor | - | 8 | -40°C | 85°C | 114 K |
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