| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 28C256ASM-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | distributor | SOIC | 28 | -55°C | 125°C | 41 K |
| 28C64ASM-1 | High speed 120 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | distributor | SOIC | 28 | -55°C | 125°C | 42 K |
| CT30SM-12 | 30A insulated gate bipolar transistor for general inverter ups use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 36 K |
| CT30SM-12 | 600V, 30A general purpose IGBT | distributor | - | - | - | - | 40 K |
| FK10SM-12 | 10A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 53 K |
| FK14SM-10 | 14A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 54 K |
| FK14SM-12 | 14A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 54 K |
| FK18SM-12 | 18A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 54 K |
| FK20SM-10 | 20A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 53 K |
| FK7SM-12 | 7A power mosfet for high-speed switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -55°C | 150°C | 54 K |
| [1] [2] [3] 4 [5] [6] [7] [8] |
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