| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1SS120 | High frequency small signal diode | distributor | MHD | - | - | - | 27 K |
| BSS123 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | - | - | - | - | 284 K |
| BSS123 | N-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | SOT23 | - | - | - | 56 K |
| BSS123 | N-channel SIPMOS small-signal transistor | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 133 K |
| BSS123LT1 | TMOS FET transistor | Motorola | - | 3 | -55°C | 150°C | 93 K |
| BSS124 | N-channel SIPMOS small-signal transistor | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 78 K |
| BSS125 | N-channel SIPMOS small-signal transistor | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 78 K |
| BSS129 | N-channel SIPMOS small-signal transistor | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 282 K |
| SS12 | 1.0 Ampere Schottky Barrier Rectifiers | Fairchild-Semiconductor | - | - | - | - | 37 K |
| SS12 | Surface Mount Schottky Barrier Rectifier | General-Semiconductor | - | - | - | - | 80 K |
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