| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HYB3116160BST-50 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 258 K |
| HYB3118160BST-50 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 258 K |
| HYB3118165BST-50 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 192 K |
| HYB5118165BST-50 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 192 K |
| MC33275ST-5.0T3 | Low Dropout 300mA Voltage Regulator | ON-Semiconductor | - | 4 | - | - | 197 K |
| MH32V25BST-5 | 2415919104-bit (33554432-word by 72-bit) synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 135 K |
| MH32V7245BST-5 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 138 K |
| MH32V7245BST-5 | 2415919104-bit (33554432-word by 72-bit) synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 138 K |
| MH32V725BST-5 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 135 K |
| SC1117CST-5TR | 5V 0.8 AMP positive voltage regulator | Semtech-Corporation | - | 3 | 0°C | 125°C | 127 K |
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