Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AT-250 | DC-2 GHz, voltage variable attenuator | M-A-COM---manufacturer-of-RF | - | 8 | -40°C | 85°C | 122 K |
AT-250RTR | DC-2 GHz, voltage variable attenuator | M-A-COM---manufacturer-of-RF | - | 8 | -40°C | 85°C | 122 K |
AT-250TR | DC-2 GHz, voltage variable attenuator | M-A-COM---manufacturer-of-RF | - | 8 | -40°C | 85°C | 122 K |
GS816018T-250 | 5.5ns 250MHz 1M x 18 18Mb synchronous burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 785 K |
GS816018T-250I | 5.5ns 250MHz 1M x 18 18Mb synchronous burst SRAM | distributor | TQFP | 100 | -40°C | 85°C | 785 K |
GS816019T-250 | 250MHz 1M x 18 synchronous SRAM | distributor | TQFP | 100 | -40°C | 85°C | 901 K |
GS816032T-250 | 5.5ns 250MHz 512K x 32 18Mb synchronous burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 785 K |
GS816032T-250I | 5.5ns 250MHz 512K x 32 18Mb synchronous burst SRAM | distributor | TQFP | 100 | -40°C | 85°C | 785 K |
GS816036T-250 | 5.5ns 250MHz 512K x 36 18Mb synchronous burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 785 K |
GS816036T-250I | 5.5ns 250MHz 512K x 36 18Mb synchronous burst SRAM | distributor | TQFP | 100 | -40°C | 85°C | 785 K |
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