| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AJT006 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 250°C | 17 K |
| AT006N3-00 | GaAs 30 dB IC voltage variable dual control attenuator DC-6 GHz | distributor | - | - | -55°C | 125°C | 175 K |
| AT006N3-01 | GaAs 30 dB IC voltage variable dual control attenuator DC-6 GHz | distributor | - | 7 | -55°C | 125°C | 40 K |
| AT006N3-10 | GaAs 30 dB IC voltage variable dual control attenuator DC-6 GHz | distributor | - | 7 | -55°C | 125°C | 40 K |
| AT006N3-93 | GaAs 30 dB IC voltage variable dual control attenuator DC-8 GHz | distributor | - | - | -40°C | 90°C | 49 K |
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