| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| STB18N20 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 126 K |
| TB1800H | 160V; 100A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 184 K |
| TB1800H | Rated repetitive off-state voltage:160 ,surface mount thyristor surge protective device | distributor | SMB | 2 | -40°C | 150°C | 46 K |
| TB1800L | 160V; 30A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 190 K |
| TB1800L | Rated repetitive off-state voltage:160 ,surface mount thyristor surge protective device | distributor | SMB | 2 | -40°C | 150°C | 47 K |
| TB1800M | 160V; 50A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 187 K |
| TB1800M | Rated repetitive off-state voltage:160 ,surface mount thyristor surge protective device | distributor | SMB | 2 | -40°C | 150°C | 47 K |
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