Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MTB40N10E | TMOS E-FET power field effect transistor | Motorola | DPAK | 4 | -55°C | 150°C | 192 K |
STB40NE03L-20 | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 101 K |
STB40NF03L | N-CHANNEL 30V - 0.020 OHM - 40A D2PAK STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 84 K |
STB40NF10 | N-CHANNEL 100V - 0.030 OHM - 40A TO-263 LOW GATE CHARGE STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 48 K |
STB40NF10-1 | N-CHANNEL 100V - 0.024 OHM - 50A TO-220/D2PAK/I2PAK LOW GATE CHARGE STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 479 K |
STB40NF10-1 | N-CHANNEL 100V - 0.024 OHM - 50A TO-220/D2PAK/I2PAK LOW GATE CHARGE STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 479 K |
STB40NF10L | N-CHANNEL 100V 0.028 OHM 40A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 435 K |
STB40NS15 | N-CHANNEL 150V 0.042 OHM 40A D2PAK MESH OVERLAY MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 289 K |
STB40NS15 | N-CHANNEL 150V 0.042 OHM 40A D2PAK MESH OVERLAY MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 289 K |
VTB4051 | Process photodiode. Isc = 200 microA, Voc = 490 mV at H = 100 fc, 2850 K. | distributor | Ceramic | 2 | -20°C | 75°C | 33 K |
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