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tb84

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
VTB8440Process photodiode. Isc = 45 microA, Voc = 490 mV at H = 100 fc, 2850 K.distributorCeramic2-20°C75°C26 K
VTB8440BProcess photodiode. Isc = 5 microA, Voc = 420 mV at H = 100 fc, 2850 K.distributorCeramic2-20°C75°C27 K
VTB8441BProcess photodiode. Isc = 5 microA, Voc = 420 mV at H = 100 fc, 2850 K.distributorCeramic2-20°C75°C27 K
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