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tb85

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K6T4008U1C-TB85512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-powerSamsung-Electronic-320°C70°C186 K
K6T4008V1C-TB85512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 85ns, LL-powerSamsung-Electronic-320°C70°C186 K
STB85NF3LLN-CHANNEL 30V 0.006 OHM 85A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFETSGS-Thomson-Microelectronics----428 K
STB85NF3LL-1N-CHANNEL 30V 0.006 OHM 85A TO-220/I2PAK LOW GATE CHARGE STRIPFET MOSFETSGS-Thomson-Microelectronics----264 K
STB85NF55N-CHANNEL 55V - 0.0062 OHM - 80A D2PAK/TO-220 STRIPFET II POWER MOSFETSGS-Thomson-Microelectronics----376 K
STB85NF55N-CHANNEL 55V - 0.0062 OHM - 80A D2PAK/TO-220 STRIPFET II POWER MOSFETSGS-Thomson-Microelectronics----376 K
STB85NF55LN-CHANNEL 55V - 0.0060 OHM - 80A D2PAK/TO-220 STRIPFET II POWER MOSFETSGS-Thomson-Microelectronics----370 K
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