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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MBM29DL323TE12PBTFlash memory CMOS 32M (4M x 8/2 x 16)bit dual operationFujitsu-Microelectronisplastic FBGA63-40°C85°C1 M
MBM29DL323TE12TRFlash memory CMOS 32M (4M x 8/2 x 16)bit dual operationFujitsu-Microelectronisplastic TSOP48-40°C85°C1 M
MBM29DL324TE12PBTFlash memory CMOS 32M (4M x 8/2 x 16)bit dual operationFujitsu-Microelectronisplastic FBGA63-40°C85°C1 M
MBM29DL324TE12TNFlash memory CMOS 32M (4M x 8/2 x 16)bit dual operationFujitsu-Microelectronisplastic TSOP48-40°C85°C1 M
MBM29DL324TE12TRFlash memory CMOS 32M (4M x 8/2 x 16)bit dual operationFujitsu-Microelectronisplastic TSOP48-40°C85°C1 M
MBM29LV160TE12PBTFlash memory CMOS 16M (2M x 8/1 x 16)bitFujitsu-Microelectronisplastic FBGA48-40°C85°C653 K
MBM29LV160TE12PCVFlash memory CMOS 16M (2M x 8/1 x 16)bitFujitsu-Microelectronisplastic CSOP48-40°C85°C653 K
MBM29LV160TE12TNFlash memory CMOS 16M (2M x 8/1 x 16)bitFujitsu-Microelectronisplastic TSOP48-40°C85°C653 K
MBM29LV160TE12TRFlash memory CMOS 16M (2M x 8/1 x 16)bitFujitsu-Microelectronisplastic TSOP48-40°C85°C653 K
VTE1261GaAlAs infrared emitting diode. Irradiance(typ) 3.9 mW/cm2 (distance 36 mm, diameter 6.4 mm).distributor-2-40°C100°C40 K
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